| PART |
Description |
Maker |
| BA5913FPY A5801091 BA5913FP-Y BA5913 |
4-channel BTL driver for CD players and CD-ROM drives 4通道的CD播放器和CD - ROM驱动器桥接驱动程
4-channel BTL Driver for CD Players and CD-ROM Drives(CD播放器和CD-ROM驱动器用的四通道BTL驱动
4-channel BTL driver for CD players and CD- ROM drives
From old datasheet system
|
Rohm Co., Ltd.
Rohm CO.,LTD.
ROHM[Rohm]
|
| HIP6601BCBZ HIP6601BECBZA HIP6601BCBZA HIP6601BECB |
Drives Two N-Channel MOSFETs
Synchronous Rectified Buck MOSFET Drivers
|
Intersil Corporation
|
| V23990-P546-A39-PM V23990-P546-C39-PM V23990-P546- |
Industrial drives Embedded drives
|
Vincotech
|
| V23990-P580-A41-PM V23990-P580-C41-PM |
Industrial drives Embedded drives
|
Vincotech
|
| V23990-P545-C38-PM V23990-P545-X3X-D4-14 V23990-P5 |
Industrial drives Embedded drives
|
Vincotech
|
| IRFR120 IRFU120 FN2414 |
8.4A, 100V, 0.270 Ohm, N-Channel Power MOSFETs 8.4 A, 100 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
(IRFR120 / IRFU120) N-Channel Power MOSFETs
From old datasheet system
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
| FSPYC260D1 FSPYC260F FSPYC260F4 FN4850 FSPYC260R4 |
From old datasheet system
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐N沟道MOS场效应管) 抗辐射，抗SEGR N沟道功率MOSFET（抗辐射沟道马鞍山场效应管）
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs 58 A, 200 V, 0.031 ohm, N-CHANNEL, Si, POWER, MOSFET
|
INTERSIL[Intersil Corporation]
Intersil, Corp.
|
| IXTQ23N60Q |
Discrete MOSFETs: Standard N-channel Types
Power MOSFETs Q-Class
|
IXYS Corporation
|
| BA5921FP A5800797 |
From old datasheet system
4-channel BTL driver for CD player and CD-ROM drives
|
ROHM[Rohm]
|
| FDH210N08 |
Motor Drives and Uninterruptible Power Supplies
N-Channel UniFETTM MOSFET
|
Fairchild Semiconductor
|
| FSJ163R4 FSJ163D FSJ163D1 FSJ163D3 FSJ163R FSJ163R |
Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs
44A/ 200V/ 0.050 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
70A/ 100V/ 0.022 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
|
INTERSIL[Intersil Corporation]
|
| MRF6S19100H MRF6S19100HR3 MRF6S19100HR306 MRF6S191 |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
|
Freescale Semiconductor, Inc
MOTOROLA
|
